In this study, the properties of Al0.18Ga0.82N
films grown on stripe-grooved GaN templates with different trench depths have
been investigated by field emission scanning electron microscopy (FESEM),
transmission electron microscopy (TEM), double crystal X-ray diffractometer
(DCXRD), and photoluminescence (PL) measurement. Based upon the results of
FESEM observations, a crack-free Al0.18Ga0.82N
surface has been achieved using a GaN template with 1-μm-deep trenches.
Moreover, from the observations of TEM, the density of threading dislocations
in Al0.18Ga0.82N
film was found to reduce during the lateral growth on the trench regions. DCXRD
and PL both measurements were carried out to determine the quality of the Al0.18Ga0.82N
films. The full-width at half-maxima of double crystal X-ray rocking curve and
PL spectrum are the smallest, respectively, for the Al0.18Ga0.82N
film grown on grooved GaN template having 1 μm-deep trenches. It is
believed that the use of the grooved GaN templates effectively improves the
quality of the overgrown Al0.18Ga0.82N
films.
Source:Journal
of Crystal Growth
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you need more information about Influence of the trench depths of grooved GaN
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