Products

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, which offer GaN template as follows:

N type, Si doped GaN template
N type, undoped GaN template
Semi-insulating, Fe doped GaN template
P type, Mg doped GaN template
AlN template
InGaN templates
Free Standing GaN template

They exhibit industry leading low defect densities and are epi ready for subsequent device epitaxy

For detail specs, please see below:

1)N type, Si doped GaN template(GaN on Sapphire(0001))
   Conduction Type: Si doped (N+)
   Thickness:4um,20um,30um,50um,100um
   Orientation: c-axis (0001) ± 1.0°
   Resistivity: <0.05 Ohm.cm
   Dislocation Density:<1x108cm-2
   Substrate Structure: GaN on Sapphire(0001)
   Front Surface Finish (Ga-face): As-grown
   Back Surface Finish: SSP or DSP
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
   Available Grades: Production, Research and Rider

2)N type, undoped GaN template
   Conduction Type: undoped (N-)
   Thickness:4um,20um,30um,50um,100um
   Orientation: c-axis (0001) ± 1.0°
   Resistivity: <0.05 Ohm.cm
   Dislocation Density:<1x108cm-2
   Substrate Structure: GaN on Sapphire(0001)
   Front Surface Finish (Ga-face): As-grown
   Back Surface Finish: SSP or DSP
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
   Available Grades: Production, Research and Rider

3)Semi-insulating, Fe doped GaN template
   Conduction Type: Fe doped (SI)
   Thickness:30um,90um
   Orientation: c-axis (0001) ± 1.0°
   Resistivity: >1x106Ω·cm
   Dislocation Density:<1x108cm-2
   Substrate Structure: GaN on Sapphire(0001)
   Front Surface Finish (Ga-face): As-grown
   Back Surface Finish: SSP or DSP
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)
   Available Grades: Production, Research and Rider

4)P type, Mg doped GaN template
   Conduction Type: Mg doped (P+)
   Thickness:5um
   Orientation: C-axis(0001)+/-1O
   Resistivity: <1Ω·cm or custom
   Dopant Concentration:>1E17(cm-3)  or custom
   Substrate Structure: GaN on Sapphire(0001)
   Front Surface Finish (Ga-face): As-grown
   Back Surface Finish: SSP or DSP
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm)
   Available Grades: Production, Research and Rider

5)2"GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;

2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;

3)vertical conductive structures on n-type SiC;

4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;

5)GaN n-type layer on 330µm+/-25um thick 2” wafer.

6) Single or double side polished, epi-ready, Ra<0.5um

7)Typical value on XRD: Wafer ID Substrate ID XRD(102) XRD(002) Thickness #2153    X-70105033 (with AlN) 298 167 679um

6)2" GaN on Silicon Substrate

1) GaN layer thickness:50nm-4um;

2) N type or semi-insulating GaN are available;

3) Single or double side polished, epi-ready, Ra<0.5um

7)AlN template
   Conduction Type: semi-insulating
   Thickness:50-1000nm+/- 10%
   Orientation: C-axis(0001)+/-1O
   Orientation Flat:A-plane
   XRD FWHM of (0002):<200 arcsec
   Substrate Structure: AlN on sapphire
   Back Surface Finish: SSP or DSP,epi-ready
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm),
   Available Grades: Production, Research and Rider

8)InGaN templates
   Conduction Type:In doped, semi-insulating
   Thickness:50-200nm, custom
   Orientation: C-axis(0001)+/-1O
   Dislocation Density:~ 108 cm-2
   Substrate Structure:
   Surface Finish: SSP or DSP,epi-ready
   Usable Area: ≥ 90 %
   Available Sizes: 2” (50.8 mm)
   Available Grades: Production, Research and Rider

9)Free Standing GaN template
  Available Sizes: 2”dia,1.8"dia,1.5"dia, 1"dia,14mm*15mm square,10mm*10.5mm    square,5mm*5.5mm square
 Available Grades: LED grade, LD grade

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Source:PAM-XIAMEN

If you find them interesting,please contact us: gan@powerwaywafer.com or www.powerwaywafer.com.

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