Porous GaN templates were prepared by combined
electrochemical etching (ECE) and back-side photoelectrochemical etching
(PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum
well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and
electrical properties of the GaN and LED structures were studied and compared
with the properties of structures grown under the same conditions on templates
not subjected to ECE–PECE treatment. Overgrowth of LED structures on the ECE–PECE
templates reduced strain, cracking, and micropits, leading to increased
internal quantum efficiency and light extraction efficiency. This luminescence
enhancement was observed in overgrown GaN films, but was more pronounced for
InGaN/GaN LED structures due to suppression of piezoelectric polarization field
in QWs.
Highlights
•
Porous GaN template was prepared by electrochemical and photoelectrochemical
etching scheme.
•
InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN
template.
•
Overgrown GaN films and LEDs showed lower strain and lower density of surface
defects.
•
The overgrown LED structures showed enhanced electroluminescence efficiency.
Source: Journal of Alloys and Compounds
If you need more information about Electrical and structural properties
of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates
fabricated by combined electrochemical and photoelectrochemical etching, please visit: http://www.powerwaywafer.com or send
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