Optical and electrical improvements of semipolar (11-22) GaN-based light emitting diodes by Si doping of n-GaN template

We report that the performance of semipolar (11-22) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (11-22) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates.
Highlights
• In GaN film, Si-doping process would be effective to decrease out-of plane PSFs toward [1-100] rather than other in-plane crystal defects.

• Interfacial qualities of semipolar (11-22) InGaN/GaN QWs would be improved by increasing SiH₄ flow rate of n-type GaN template.

• Electron concentration and mobility of semipolar (11-22) n-type GaN were increased by increasing SiH₄ flow rate.

• Light output power of semipolar (11-22) GaN-based LEDs were increased with SiH₄ flow rate of n-type GaN templates.

Source:Journal of Alloys and Compounds

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