Heteroepitaxial growth and structural characterization of rutile TiO2 thin films on GaN (0 0 0 1) templates prepared by pulsed laser deposition

Rutile TiO₂ (1 0 0) thin films have been prepared on GaN (0 0 0 1) surfaces in the temperature range 300–600 °C by pulsed laser deposition (PLD) method. The effects of both the oxygen pressure and the substrate temperature on the properties of the TiO₂ films were investigated. TiO₂ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscope (TEM). Optimum parameters have been determined for growing high-quality TiO₂ thin films with a sharp interface, in which the epitaxial orientation relationship between rutile TiO₂ and GaN is TiO₂ [001] //GaN [11-20]. The surface morphology of TiO₂ thin films exhibited a marked dependence on the substrate temperature, and the better crystallinity of the TiO2 thin films can be obtained at lower oxygen pressure.

Source: sciencedirect

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