Heteroepitaxial growth and structural characterization of rutile TiO2 thin films on GaN (0 0 0 1) templates prepared by pulsed laser deposition

Rutile TiO2 (1 0 0) thin films have been prepared on GaN (0 0 0 1) surfaces in the temperature range 300–600 °C by pulsed laser deposition (PLD) method. The effects of both the oxygen pressure and the substrate temperature on the properties of the TiO2 films were investigated. TiO2 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscope (TEM). Optimum parameters have been determined for growing high-quality TiO2 thin films with a sharp interface, in which the epitaxial orientation relationship between rutile TiO2 and GaN is TiO2 [001] //GaN View the MathML source. The surface morphology of TiO2 thin films exhibited a marked dependence on the substrate temperature, and the better crystallinity of the TiO2 thin films can be obtained at lower oxygen pressure.


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