Dislocation reduction in GaN grown on nano-patterned templates

Highlights

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Using nano-holes patterned template as the substrate, TD density in GaN epitaxial layers has been effectively reduced.

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By optimize the periodicity of the nano-hole pattern as well as the size and depth of holes, the TD density has been reduced to ~10⁷ cm⁻².

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Cross-sectional TEM positively confirms the termination of TDs at positions of nano-hole voids.

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Abstract

A nano-holes patterned GaN-on-patterned sapphire substrate template has been developed to reduce the threading dislocation (TD) density in homoepitaxy GaN layer grown by plasma-assisted molecular beam epitaxy. The grown layers characterized by high resolution x-ray diffraction, photoluminescence, and cross-section transmission electron microscopy confirm that the TD density of GaN epilayer has been successfully reduced an order of magnitude to ~10⁷ cm⁻² by optimizing the depth and coverage area percentage of patterned nano-holes.

Keywords

• A1. Threading dislocations; 
• A2. Nanoimprint lithography; 
• A3. Molecular beam epitaxy
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    • Source:Sciencedirect 
      
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