Highlights
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- The InGaN/GaN multiple quantum wells (MQWs) with truncated pyramid structure have been successfully fabricated.
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- The MQWs have been formed on the GaN hexagonal pyramids template through an etch-regrown process.
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- The MQWs shows the multiple peaks, which will be building blocks for highly efficient broadband visible light emitting devices.
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- The method is a simple low-cost and easy to be accomplished in mass production.
- Semiconductor;
- Epitaxial growth;
- Optical materials and properties
- Source:Sciencedirect
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Abstract
The InGaN/GaN multiple quantum wells (MQWs) with truncated pyramid structure have been successfully epitaxially grown on the GaN hexagonal pyramids template through a simple and low-cost etch-regrown process. GaN hexagonal pyramids template was contained by a convenient photo-assisted chemical (PAC) etching method. The truncated pyramids are composed of 
and 
semi-polar facets as well as (0001) polar facet. It was observed that the InGaN/GaN MQWs substantially emitted broad spectrum with multiple peaks by room temperature photoluminescence (PL). The cathodoluminescence of MQWs red-shifts as the location moves from bottom to top on the facets due to the indium diffusion mechanism.
and semi-polar facets as well as (0001) polar facet. It was observed that the InGaN/GaN MQWs substantially emitted broad spectrum with multiple peaks by room temperature photoluminescence (PL). The cathodoluminescence of MQWs red-shifts as the location moves from bottom to top on the facets due to the indium diffusion mechanism.
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