Gallium nitride-based nanopyramid
light-emitting diodes are a promising technology to achieve highly efficient
solid-state lighting and beyond. Here, periodic nanopyramid light-emitting
diode arrays on gallium nitride templates and sapphire templates were fabricated by
selective-area metalorganic chemical vapor deposition and multiple-exposure
colloidal lithography. The electric field intensity distribution of incident
light going through polystyrene microspheres and photoresist are simulated
using finite-different time-domain method. Nitrogen as the carrier gas and a
low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are
found to be important in order to form gallium nitride nanopyramid. In
addition, a broad yellow emission in photoluminescence and cathodoluminescence
spectra were observed. This phenomena showed the potential of nanopyramid
light-emitting diodes to realize long wavelength visible emissions.
Source:IOPscience
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