Using transmission electron microscopy (TEM),
the authors have investigated the behavior of threading dislocations in ZnO
selectively grown on a facet-controlled epitaxial overgrown GaN template. In
this case, the ZnO is grown by a vapor transport method. The TEM study in the
overgrown regions shows that all the pure-edge type dislocations in ZnO are
parallel toward the mask area and vertical propagation of dislocation to the
ZnO surface is minimized. Using such a selective growth technique on a faceted
semi-polar GaN surface, a reduction of threading dislocation density in ZnO
could be achieved.
Source:IOPscience
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