We investigated the modulation responses and
optoelectronic properties of light-emitting diodes (LEDs) grown on
free-standing (0001) GaN. These LEDs have a larger modulation bandwidth than
those grown on sapphire at a higher current density, and a maximum of −3 dB
modulation bandwidth of 510 MHz was achieved, which is 1.7 times larger
compared to LEDs grown on sapphire. In addition, due to the lower substrate
temperature, there may be an increase in the indium that is incorporated into
the active region as well as the point defects of the LEDs grown on GaN, which
will influence the optoelectronic properties.
Source:IOPscience
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