We report nano-selective area growth (NSAG)
of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single
crystalline nanopyramids. This is in contrast to unmasked or micro-selective
area growth, which results in a multi-crystalline structure on both substrates.
Various characterization techniques were used to evaluate NSAG as a viable
technique to improve BGaN material quality on AlN/Si(111) using results of GaN
NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid
quality, shape and size uniformity revealed that the growth mechanism is the
same on both the templates. Further STEM analysis of BGaN nanopyramids on
AlN/Si (111) templates confirmed that these are single-crystalline structures
without any dislocations, likely due to single nucleation occurring in the 80
nm mask opening. CL results correspond to boron content between 1.7% and 2.0%
in the nanopyramids. We conclude that NSAG is promising for growth of
high-quality BGaN nanostructures and complex nano-heterostructures, especially
for low-cost silicon substrates.
Source:IOPscience
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