Source:IOPscience
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send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN's Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nanorod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm−3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.
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