“Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer's requests,including researcher and device foundry",said Victor Chan, a senior marketing manager for the company.
The Product
New substrates consist of an p-GaN layer deposited on 2-inch GaN/sapphire template. Crystal Structure:
p-GaN >=2um
u-GaN >=2um
Buffer layer:-
Sapphire 430um
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
In 2001,PAM-XIAMEN has been involved in GaN material research.PAM-XIAMEN now offer GaN, InGaN, InN, and AlN epitaxial products with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities.
If you need more information about p-GaN wafer, please visit: http://www.powerwaywafer.com/GaN-Templates.html
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