P Type GaN Template

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template

“Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer's requests,including researcher and device foundry",said Victor Chan, a senior marketing manager for the company.

The Product

New substrates consist of an  p-GaN layer deposited on 2-inch GaN/sapphire template. 

Crystal Structure:                        
                                           
p-GaN  >=2um                                            
u-GaN   >=2um                              
                                           
Buffer layer:-                                
                                         
Sapphire  430um                          
                                            
About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

In 2001,PAM-XIAMEN has been involved in GaN material research.PAM-XIAMEN now offer  GaN, InGaN, InN, and AlN epitaxial products with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities.

If you need more information about p-GaN wafer, please visit: http://www.powerwaywafer.com/GaN-Templates.html               

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