GaN nanowires are grown as templates for pendeoepitaxial coalescence overgrowth at substrate temperatures between 720 and 820 °C on Si(1 1 1) by molecular beam epitaxy. The unintentional coalescence of nanowires is suppressed with increasing substrate temperature. Simultaneously, the width of the donor-bound-exciton transition at 3.472 eV decreases down to 1.6 meV. The length distribution of the GaN nanowires strongly influences the morphology of the pendeoepitaxial layer after coalescence.
Keywords
- A1. Nanowires;
- A3. Pendeoepitaxy;
- A3. Molecular beam epitaxy;
- B2. GaN-on-Si
- Source:Sciencedirect
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