A new layer transfer technique which
comprised double bonding and a step annealing process was utilized to transfer
the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the
application of the thermal-stable bonding medium, the resulting
two-inch-diameter GaN template showed extremely good stability under high
temperature and low stress state. Moreover, no cracks and winkles were
observed. The transferred GaN template was suitable for homogeneous epitaxial,
thus could be used for the direct fabrication of vertical LED chips as well as
power electron devices. It has been confirmed that the double bonding and step
annealing technique together with the thermal-stable bonding layer could
significantly improve the bonding strength and stress relief, finally enhancing
the thermal stability of the transferred GaN template.
Source:IOPscience
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