In this paper, we discuss the influence of parameters such as
type of carrier gas and NH3/HCl flow ratio on the growth of vertical GaN
microstructures by selective-area growth (SAG) hydride vapor phase epitaxy
(HVPE). On various strain-induced templates such as GaN/sapphire, GaN/Si, and
AlN/Si, regular arrays of Ga-polar GaN microrods were properly achieved by
adjusting the growth parameters. The photoluminescence and micro-Raman
measurements reveal not only the crystal quality of the GaN microrods but also
strain distribution. These results will give insight into the control of the
morphology of GaN microrods in terms of the strain induced from templates in
SAG-HVPE. The precisely controlled arrays of GaN microrods can be used for
next-generation light-emitting diodes (LEDs) by realizing InGaN/GaN
multi–quantum wells (MQWs) with a radial structure.
Source:IOPscience
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