Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN templates or sapphire templates with improved material quality and light extraction efficiency. Enhancement of light extraction efficiency is attributed to voids generated at the GaN/sapphire interface. The sidewall inclination angle of the voids can be controlled from nearly vertical (~ 85°) to fully inclined (~ 60°) by changing the initial patterning dimensions. Light extraction efficiency and material quality improve with a decreasing void sidewall angle. A 20% increase in the light output is observed at 20 mA of input current for LED structures with ~60° inclined sidewall voids.

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