We clarify the effect of the stress in GaN
templates on the subsequent AlInGaN deposition by simply growing 150nm AlInGaN
on a 30 μm GaN template (sample 1) prepared by hydride vapor phase epitaxy and
a 2.3 μm thin control GaN template (sample 2) prepared by metalorganic chemical
vapor deposition. X-ray diffraction and secondary iron mass spectroscopy
measurements reveal the stress states (tensile stress and full relaxed for
samples 1 and 2, respectively) and compositions (Al0.169In0.01 Ga0.821N,
Al0.171In0.006Ga0.823N for samples 1 and 2, respectively) of AlInGaN. By
carefully eliminating other possible factor, as template surface roughness, it
is concluded that different stress states of AlInGaN should stem from different
stress states of GaN templates.
Source:IOPscience
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