A thermal-etching process for fabricating
nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was
proposed. Such nanoporous templates exhibited nearly complete strain relaxation
and considerably increased photoluminescence (PL) intensity. The threading
dislocation density (TDD) after overgrowth was reduced from 3 ×109 to 4 ×108
cm-2 for the template with poor quality, whereas little improvement was
observed for the high-quality template (TDD, 4 ×108 cm-2). Multiple quantum
wells (MQWs) grown on a nanoporous template fabricated from the high-quality
GaN template were used to assess the effect on LED performance. The PL
intensity of the sample with a nanoporous structure showed a twofold increase
in PL intensity compared with the control sample.
Source:IOPscience
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