Epitaxial evolution of buried cracks in a
strain-controlled AlN/GaN superlattice interlayer (IL) grown on GaN template,
resulting in crack-free AlGaN/GaN multiple quantum wells (MQW), was
investigated. The processes of filling the buried cracks include crack
formation in the IL, coalescence from both side walls of the crack, build-up of
an MQW-layer hump above the cracks, lateral expansion and merging with the
surrounding MQW, and two-dimensional step flow growth. It was confirmed that
the filling content in the buried cracks is pure GaN, originating from the
deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms
into the cracks plays a key role in the filling the buried cracks.
Source:IOPscience
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