Growth of semipolar Group-III nitrides based
devices offers a means of reducing the deleterious effects of the
polarization-induced electric fields present in the polar quantum wells. We
report on the fabrication of blue InGaN/GaN multiple-quantum well
light-emitting diodes (LEDs) on semipolar (10-1-1) and (10-1-3) oriented GaN
templates. A maximum on-wafer continuous wave output power of 190 µW was
measured at 20 mA for 300×300 µm2 devices, and output power as high as 1.53 mW
was measured at 250 mA. Drive-current independent electroluminescence peak at
439 nm was observed for the LEDs grown on both the planes. The current–voltage
characteristics of these LEDs showed rectifying behavior with a forward voltage
of 3–4 V at 20 mA.
Source:IOPscience
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