GaN films were deposited on wet-etched GaN
templates having various etch pit sizes. Improved optical characteristics of the
overgrown GaN films were observed including a remarkable increment in
photoluminescence (PL) intensity and a considerable reduction in emission
linewidth of the near bandedge (BE) emission. Improvement of the optical
property of an overgrown GaN film is attributed to a selective elimination of
threading dislocations (TDs) which results in a reduction of etching pit
density (EPD) count of the overgrown GaN film.
Source:IOPscience
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