Optical Characteristics of GaN Films Overgrown on Wet-etched GaN Templates

GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

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