GaN nanowires are grown as templates for pendeoepitaxial
coalescence overgrowth at substrate temperatures between 720 and 820 °C on
Si(1 1 1) by molecular beam epitaxy. The unintentional coalescence of
nanowires is suppressed with increasing substrate temperature. Simultaneously,
the width of the donor-bound-exciton transition at 3.472 eV decreases down
to 1.6 meV. The length distribution of the GaN nanowires strongly
influences the morphology of the pendeoepitaxial layer after coalescence.
Source:
Journal of Crystal Growth
If you need more information about GaN nanowire
templates for the pendeoepitaxial coalescence overgrowth on Si(1 1 1)
by molecular beam epitaxy, please visit: http://www.powerwaywafer.com or send
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